Overview

Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.

  • The lowest conduction loss on the market
  • Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
  • Easier parallel operation by suppressing Vth variation
  • Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area

This 750V/220A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

  • 750V trench & field stop AE5 technology 
  • Low collector to emitter saturation voltage (1.35V typ.)
  • Low switching loss
  • Easy paralleling by internal Rg and narrow VGE(th) distribution
  • Solderable and sinterable top metal
  • AEC Q101 (HTRB, HTGB) qualified

Applications

  • Hybrid and electric vehicle inverter

Documentation

= Featured Documentation
Type Title Date
Datasheet
RBN220N75A5PJWS Datasheet
Log in to Download PDF 166 KB
Application Note
IGBT Usage Notes on Gate Drive
PDF 1.11 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Application Note
Usage Notes for Paralleled IGBT
PDF 941 KB 日本語
Application Note
IGBT Application Note
PDF 1.05 MB 日本語
5 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
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    Part Number
    RBN220N75A5PJWS-000#FF0
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